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首页> 外文期刊>Diffusion and Defect Data. Solid State Data, Part B. Solid State Phenomena >Process-Induced Changes of the Properties of Silicon Oxide Layers Containing Carbon: Study of a Low-k Material to be Used in the Interconnection System
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Process-Induced Changes of the Properties of Silicon Oxide Layers Containing Carbon: Study of a Low-k Material to be Used in the Interconnection System

机译：过程引起的含碳氧化硅层性能的变化：一种用于互连系统的低介电常数材料的研究

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摘要

SiO_2-based, carbon containing low-fc films were studied in the as-deposited state as well as after etching and ashing with respect to their compositional and structural properties. The dielectric constant of the films was determined as well. FTIR spectroscopy revealed a remarkable increase of the layer porosity due to etching and ashing. These processes were found also to result in an increase of the carbon content in the layers, as detected by energy-dispersive x-ray analysis and FTIR. The dielectric constant of the layers was observed to be in accordance with the degree of porosity.
机译：在沉积状态下以及在蚀刻和灰化后，研究了基于SiO_2的含碳低fc膜的组成和结构特性。还确定了膜的介电常数。 FTIR光谱显示，由于蚀刻和灰化，层的孔隙率显着增加。还发现这些过程也导致了层中碳含量的增加，这是通过能量色散X射线分析和FTIR检测到的。观察到各层的介电常数与孔隙率一致。

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